ultra-fast avalanche sinterglass diode SF1200, sf1600 vishay semiconductors www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86059 84 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 04-aug-10 mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? very low switching losses ? glass passivated ? high reverse voltage ? hermetically sealed axial-leaded glass envelope ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? switched mode power supplies ? high-frequency inverter circuits 949539 parts table part type differentiation package SF1200 v r = 1200 v; i fav = 1 a sod-57 sf1600 v r = 1600 v; i fav = 1 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics SF1200 v r = v rrm 1200 v sf1600 v r = v rrm 1600 v peak forward surge current t p = 10 ms, half sine wave i fsm 30 a average forward current half sine wave, v r = v rrm , r thja = 45 k/w i fav 1a max. pulse energy in avalanche mode, non repetitive (inductive load switch off i (br)r = 400 ma, inductive load e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w
SF1200, sf1600 ultra-fast avalanche sinterglass diode vishay semiconductors document number: 86059 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 04-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 85 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature fig. 3 - reverse current vs. junction temperature fig. 4 - max. reverse power diss ipation vs. juncti on temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a v f --3.4v reverse current v r = v rrm i r --5a v r = v rrm , t j = 125 c i r - - 50 a reverse breakdown voltage l r = 100 a SF1200 v (br)r 1250 - - v sf1600 v (br)r 1650 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 75 ns i ? forward current (a) 0.001 0.01 0.1 1 10 100 0123456789 v f ? forward voltag e(v) 16463 f t j =25c t j = 175 c 0.0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 160 180 t amb ? ambient temperature(c ) 15789 i ?average forward current( a ) fav v r =v rrm half sinewave r thja = 100 k/w pcb:d=25mm r thja = 45 k/w l=10mm 1 10 100 1000 25 50 75 100 125 150 175 t j ? junction temperature (c ) 16464 v r =v rrm i ? reverse current (a ) r 0 100 200 300 400 500 600 700 25 50 75 100 125 150 175 t j ? junction temperature (c ) 16465 v r =v rrm p ? reverse power dissipation ( mw) r p r ?limit at 10 0 % v r p r ?limit at 80 % v r
SF1200, sf1600 vishay semiconductors ultra-fast avalanche sinterglass diode www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86059 86 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 04-aug-10 fig. 5 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 5 10 15 20 25 30 0.1 1.0 10.0 100.0 v r ? reverse voltag e(v) 16466 c ? diode capacitance ( pf ) d f=1mhz 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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